Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang. Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. Microelectronics Reliability, 88:952-956, 2018. [doi]
@article{YuSLMLLLT18,
title = {Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices},
author = {Qingkui Yu and Yi Sun and Zheng Li and Bo Mei and Xiaoliang Li and He Lv and Pengwei Li and Min Tang},
year = {2018},
doi = {10.1016/j.microrel.2018.07.083},
url = {https://doi.org/10.1016/j.microrel.2018.07.083},
researchr = {https://researchr.org/publication/YuSLMLLLT18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {952-956},
}