Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices

Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang. Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices. Microelectronics Reliability, 88:952-956, 2018. [doi]

Abstract

Abstract is missing.