Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology - researchr publication authors

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Behzad Zeinali, Jens Kargaard Madsen, Praveen Raghavan, Farshad Moradi. Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology. I. J. Circuit Theory and Applications, 45(11):1647-1659, 2017. [doi]

This author has not been identified. Look up 'Behzad Zeinali' in GoogleThis author has not been identified. Look up 'Jens Kargaard Madsen' in GoogleThis author has not been identified. Look up 'Praveen Raghavan' in GoogleThis author has not been identified. Look up 'Farshad Moradi' in Google

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