Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology

Behzad Zeinali, Jens Kargaard Madsen, Praveen Raghavan, Farshad Moradi. Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology. I. J. Circuit Theory and Applications, 45(11):1647-1659, 2017. [doi]

Abstract

Abstract is missing.