Behzad Zeinali, Jens Kargaard Madsen, Praveen Raghavan, Farshad Moradi. Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology. I. J. Circuit Theory and Applications, 45(11):1647-1659, 2017. [doi]
@article{ZeinaliMRM17-0,
title = {Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology},
author = {Behzad Zeinali and Jens Kargaard Madsen and Praveen Raghavan and Farshad Moradi},
year = {2017},
doi = {10.1002/cta.2280},
url = {https://doi.org/10.1002/cta.2280},
researchr = {https://researchr.org/publication/ZeinaliMRM17-0},
cites = {0},
citedby = {0},
journal = {I. J. Circuit Theory and Applications},
volume = {45},
number = {11},
pages = {1647-1659},
}