The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices

T. Zhang, Bruno Allard, J. Bi. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectronics Reliability, 88:631-635, 2018. [doi]

Authors

T. Zhang

This author has not been identified. Look up 'T. Zhang' in Google

Bruno Allard

This author has not been identified. Look up 'Bruno Allard' in Google

J. Bi

This author has not been identified. Look up 'J. Bi' in Google