T. Zhang, Bruno Allard, J. Bi. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectronics Reliability, 88:631-635, 2018. [doi]
@article{ZhangAB18,
title = {The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices},
author = {T. Zhang and Bruno Allard and J. Bi},
year = {2018},
doi = {10.1016/j.microrel.2018.06.046},
url = {https://doi.org/10.1016/j.microrel.2018.06.046},
researchr = {https://researchr.org/publication/ZhangAB18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {88},
pages = {631-635},
}