The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices

T. Zhang, Bruno Allard, J. Bi. The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectronics Reliability, 88:631-635, 2018. [doi]

Abstract

Abstract is missing.