Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 2111-2114, IEEE, 2013. [doi]
@inproceedings{ZhangGM13,
title = {Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs},
author = {Jian Zhang and Pierre-Emmanuel Gaillardon and Giovanni De Micheli},
year = {2013},
doi = {10.1109/ISCAS.2013.6572291},
url = {http://dx.doi.org/10.1109/ISCAS.2013.6572291},
researchr = {https://researchr.org/publication/ZhangGM13},
cites = {0},
citedby = {0},
pages = {2111-2114},
booktitle = {2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013},
publisher = {IEEE},
isbn = {978-1-4673-5760-9},
}