A surface potential and current model for polarity-controllable silicon nanowire FETs - researchr publication authors

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Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. A surface potential and current model for polarity-controllable silicon nanowire FETs. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 48-51, IEEE, 2015. [doi]

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