A surface potential and current model for polarity-controllable silicon nanowire FETs

Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. A surface potential and current model for polarity-controllable silicon nanowire FETs. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 48-51, IEEE, 2015. [doi]

@inproceedings{ZhangGM15,
  title = {A surface potential and current model for polarity-controllable silicon nanowire FETs},
  author = {Jian Zhang and Pierre-Emmanuel Gaillardon and Giovanni De Micheli},
  year = {2015},
  doi = {10.1109/ESSDERC.2015.7324710},
  url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324710},
  researchr = {https://researchr.org/publication/ZhangGM15},
  cites = {0},
  citedby = {0},
  pages = {48-51},
  booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015},
  publisher = {IEEE},
  isbn = {978-1-4673-7135-3},
}