Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. A surface potential and current model for polarity-controllable silicon nanowire FETs. In 45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015. pages 48-51, IEEE, 2015. [doi]
@inproceedings{ZhangGM15, title = {A surface potential and current model for polarity-controllable silicon nanowire FETs}, author = {Jian Zhang and Pierre-Emmanuel Gaillardon and Giovanni De Micheli}, year = {2015}, doi = {10.1109/ESSDERC.2015.7324710}, url = {http://dx.doi.org/10.1109/ESSDERC.2015.7324710}, researchr = {https://researchr.org/publication/ZhangGM15}, cites = {0}, citedby = {0}, pages = {48-51}, booktitle = {45th European Solid State Device Research Conference, ESSDERC 2015, Graz, Austria, September 14-18, 2015}, publisher = {IEEE}, isbn = {978-1-4673-7135-3}, }