An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport

Lining Zhang, Jin He, Jian Zhang, Feng Liu, Yue Fu, Yan Song, Xing Zhang. An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport. In 10th International Symposium on Quality of Electronic Design (ISQED 2009), 16-18 March 2009, San Jose, CA, USA. pages 582-587, IEEE, 2009. [doi]

Abstract

Abstract is missing.