Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs - researchr publication authors

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C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, G. Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz. Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 30-33, IEEE, 2017. [doi]

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