Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs

C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, G. Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz. Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 30-33, IEEE, 2017. [doi]

@inproceedings{ZhangJPBBMBE17,
  title = {Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs},
  author = {C.-M. Zhang and Farzan Jazaeri and Alessandro Pezzotta and Claudio Bruschini and G. Borghello and S. Mattiazzo and Andrea Baschirotto and Christian C. Enz},
  year = {2017},
  doi = {10.1109/ESSDERC.2017.8066584},
  url = {https://doi.org/10.1109/ESSDERC.2017.8066584},
  researchr = {https://researchr.org/publication/ZhangJPBBMBE17},
  cites = {0},
  citedby = {0},
  pages = {30-33},
  booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-5978-2},
}