Rui Zhang 0048, Zhaocheng Liu, Kexin Yang, Taizhi Liu, Wenshan Cai, Linda Milor. Inverse Design of FinFET SRAM Cells. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]
@inproceedings{ZhangLYLCM20,
title = {Inverse Design of FinFET SRAM Cells},
author = {Rui Zhang 0048 and Zhaocheng Liu and Kexin Yang and Taizhi Liu and Wenshan Cai and Linda Milor},
year = {2020},
doi = {10.1109/IRPS45951.2020.9129530},
url = {https://doi.org/10.1109/IRPS45951.2020.9129530},
researchr = {https://researchr.org/publication/ZhangLYLCM20},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3199-3},
}