Effect of In content of the buffer layer on crystalline quality and electrical property of In::0.82::Ga::0.18::As/InP grown by LP-MOCVD

Tiemin Zhang, Guoqing Miao, Yixin Jin, Jianchun Xie, Hong Jiang, Zhiming Li, Hang Song. Effect of In content of the buffer layer on crystalline quality and electrical property of In::0.82::Ga::0.18::As/InP grown by LP-MOCVD. Microelectronics Journal, 38(3):398-400, 2007. [doi]

Abstract

Abstract is missing.