Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures

Zheng Zhao, Ningyue Jiang, Zhenqiang Ma, Guoxuan Qin. Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures. Microelectronics Reliability, 91:194-200, 2018. [doi]

@article{ZhaoJMQ18,
  title = {Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures},
  author = {Zheng Zhao and Ningyue Jiang and Zhenqiang Ma and Guoxuan Qin},
  year = {2018},
  doi = {10.1016/j.microrel.2018.10.006},
  url = {https://doi.org/10.1016/j.microrel.2018.10.006},
  researchr = {https://researchr.org/publication/ZhaoJMQ18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {91},
  pages = {194-200},
}