Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection - researchr publication authors

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Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li. Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. In Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2022, Xiamen, China, October 21-23, 2022. pages 605-610, ACM, 2022. [doi]

This author has not been identified. Look up 'Yuechao Zheng' in GoogleThis author has not been identified. Look up 'Dongqing Hu' in GoogleThis author has not been identified. Look up 'Chongning Zhao' in GoogleThis author has not been identified. Look up 'Yunpeng Jia' in GoogleThis author has not been identified. Look up 'Xintian Zhou' in GoogleThis author has not been identified. Look up 'Yu Wu' in GoogleThis author has not been identified. Look up 'Ting Li' in Google

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