Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection

Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li. Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. In Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2022, Xiamen, China, October 21-23, 2022. pages 605-610, ACM, 2022. [doi]

Abstract

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