Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection

Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li. Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. In Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2022, Xiamen, China, October 21-23, 2022. pages 605-610, ACM, 2022. [doi]

@inproceedings{ZhengHZJZWL22,
  title = {Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection},
  author = {Yuechao Zheng and Dongqing Hu and Chongning Zhao and Yunpeng Jia and Xintian Zhou and Yu Wu and Ting Li},
  year = {2022},
  doi = {10.1145/3573428.3573535},
  url = {https://doi.org/10.1145/3573428.3573535},
  researchr = {https://researchr.org/publication/ZhengHZJZWL22},
  cites = {0},
  citedby = {0},
  pages = {605-610},
  booktitle = {Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2022, Xiamen, China, October 21-23, 2022},
  publisher = {ACM},
  isbn = {978-1-4503-9714-8},
}