A 512 kb SRAM in 65nm CMOS with divided bitline and novel two-stage sensing technique

Xiang Zheng, Ming Liu, Hong Chen, Huamin Cao, Cong Wang, Zhiqiang Gao. A 512 kb SRAM in 65nm CMOS with divided bitline and novel two-stage sensing technique. In Jaan Raik, Viera Stopjaková, Heinrich Theodor Vierhaus, Witold A. Pleskacz, Raimund Ubar, Helena Kruus, Maksim Jenihhin, editors, IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, DDECS 2012, Tallinn, Estonia, April 18-20, 2012. pages 191-192, IEEE, 2012. [doi]

Abstract

Abstract is missing.