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High quality silicon nitride deposited by Ar/N::2::/H::2::/SiH::4:: high-density and low energy plasma at low temperature

Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi. High quality silicon nitride deposited by Ar/N::2::/H::2::/SiH::4:: high-density and low energy plasma at low temperature. Microelectronics Journal, 37(1):44-49, 2006. [doi]

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