Dependency of current collapse on the device structure of GaN-based HEMTs

Xingye Zhou, Zhihong Feng, Yuanjie Lv, Xin Tan, Yuangang Wang, Guodong Gu, Xubo Song, Peng Xu, Shaobo Dun, Shujun Cai. Dependency of current collapse on the device structure of GaN-based HEMTs. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-4, IEEE, 2015. [doi]

Abstract

Abstract is missing.