A 2-D boundary element method approach to the simulation of DMOS transistors

Ming-Jiang Zhou, Herbert De Smet, Anita De Bruycker, André Van Calster. A 2-D boundary element method approach to the simulation of DMOS transistors. IEEE Trans. on CAD of Integrated Circuits and Systems, 12(6):810-816, 1993. [doi]

Abstract

Abstract is missing.