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H. Zhou, F. G. Shi, B. Zhao, J. Yota. Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films. Microelectronics Journal, 35(7):571-576, 2004. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experimentsH. Zhou, F. G. Shi, B. Zhao. mj, 34(4):259-264, 2003. [doi]
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