Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices - researchr publication authors

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Huimei Zhou, Miaomiao Wang, Nicolas Loubet, Andrew Gaul, Yasir Sulehria. Impact of Gate Stack Thermal Budget on NBTI Reliability in Gate-All-Around Nanosheet P-type Devices. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-6, IEEE, 2023. [doi]

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