The following publications are possibly variants of this publication:
- NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet TransistorHuimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan. irps 2020: 1-6 [doi]
- Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet TransistorMiaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis. irps 2019: 1-6 [doi]
- SiGe Gate-All-around Nanosheet ReliabilityHuimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang. irps 2022: 60-1 [doi]
- TDDB Reliability in Gate-All-Around NanosheetHuimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo. irps 2021: 1-6 [doi]