Shengnan Zhu, Tianshi Liu, Marvin H. White, Anant K. Agarwal, Arash Salemi, David Sheridan. Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2021, Monterey, CA, USA, March 21-25, 2021. pages 1-7, IEEE, 2021. [doi]
Abstract is missing.