Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot - researchr publication authors

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Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi. Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. IET Circuits, Devices & Systems, 10(5):410-416, 2016. [doi]

This author has not been identified. Look up 'Jing Zhu' in GoogleThis author has not been identified. Look up 'Yunwu Zhang' in GoogleThis author has not been identified. Look up 'Weifeng Sun' in GoogleThis author has not been identified. Look up 'Yangyang Lu' in GoogleThis author has not been identified. Look up 'Yicheng Du' in GoogleThis author has not been identified. Look up 'Yangbo Yi' in Google

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