Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot

Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi. Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. IET Circuits, Devices & Systems, 10(5):410-416, 2016. [doi]

@article{ZhuZSLDY16,
  title = {Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot},
  author = {Jing Zhu and Yunwu Zhang and Weifeng Sun and Yangyang Lu and Yicheng Du and Yangbo Yi},
  year = {2016},
  doi = {10.1049/iet-cds.2015.0179},
  url = {http://dx.doi.org/10.1049/iet-cds.2015.0179},
  researchr = {https://researchr.org/publication/ZhuZSLDY16},
  cites = {0},
  citedby = {0},
  journal = {IET Circuits, Devices & Systems},
  volume = {10},
  number = {5},
  pages = {410-416},
}