Yuezhang Zou, Darshil K. Gala, James A. Bain. Impact Ionization Model for S-NDR based Threshold Switching Devices. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 107-108, IEEE, 2019. [doi]
@inproceedings{ZouGB19,
title = {Impact Ionization Model for S-NDR based Threshold Switching Devices},
author = {Yuezhang Zou and Darshil K. Gala and James A. Bain},
year = {2019},
doi = {10.1109/DRC46940.2019.9046347},
url = {https://doi.org/10.1109/DRC46940.2019.9046347},
researchr = {https://researchr.org/publication/ZouGB19},
cites = {0},
citedby = {0},
pages = {107-108},
booktitle = {Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019},
publisher = {IEEE},
isbn = {978-1-7281-2112-3},
}