A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer

X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen. A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. Microelectronics Reliability, 47(2-3):391-394, 2007. [doi]

@article{ZouXLLC07,
  title = {A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer},
  author = {X. Zou and J. P. Xu and C. X. Li and P. T. Lai and W. B. Chen},
  year = {2007},
  doi = {10.1016/j.microrel.2006.05.019},
  url = {http://dx.doi.org/10.1016/j.microrel.2006.05.019},
  tags = {C++},
  researchr = {https://researchr.org/publication/ZouXLLC07},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {47},
  number = {2-3},
  pages = {391-394},
}