Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs

Jian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. Dual-threshold-voltage configurable circuits with three-independent-gate silicon nanowire FETs. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 2111-2114, IEEE, 2013. [doi]

Abstract

Abstract is missing.