Amel Chenouf - researchr alias

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Viewing Publication 1 - 5 from 5

2020

Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigationAmel Chenouf, Boualem Djezzar, Hamid Bentarzi, Abdelmadjid Benabdelmoumene. iet-cds, 14(4):555-561, 2020. [doi]

2014

Does NBTI effect in MOS transistors depend on channel length?Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane. icm2 2014: 52-55 [doi]

Reliability analysis of CMOS inverter subjected to AC & DC NBTI stressesAmel Chenouf, Boualem Djezzar, Abdelmadjid Benabadelmoumene, Hakim Tahi, Mohamed Goudjil. idt 2014: 142-146 [doi]

Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping techniqueHakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil. mr, 54(5):882-888, 2014. [doi]

Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extractionHakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil. idt 2014: 236-241 [doi]

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