S. E. Tyaginov - researchr alias

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Viewing Publication 1 - 4 from 4

2007

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in siliconI. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler. mr, 47(4-5):669-672, 2007. [doi]

2006

The post-damage behavior of a MOS tunnel emitter transistorS. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov. mr, 46(7):1035-1041, 2006. [doi]

Tunnel charge transport within silicon in reversely-biased MOS tunnel structuresM. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov. mj, 37(2):114-120, 2006. [doi]

2004

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thicknessR. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler. mr, 44(3):543-546, 2004. [doi]

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