M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov. Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectronics Journal, 37(2):114-120, 2006. [doi]
Abstract is missing.