W. A. Sasangka - researchr alias

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Viewing Publication 1 - 5 from 5

2018

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistorsW. A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson. mr, 88:393-396, 2018. [doi]

2017

2016

Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradationGovindo J. Syaranamual, W. A. Sasangka, Riko I. Made, S. Arulkumaran, G. I. Ng, S. C. Foo, Chee Lip Gan, Carl V. Thompson. mr, 64:589-593, 2016. [doi]

2015

Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressingW. A. Sasangka, G. J. Syaranamual, Chee Lip Gan, Carl V. Thompson. irps 2015: 6 [doi]

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