Wing L. Lai - researchr alias

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Viewing Publication 1 - 4 from 4

2003

Statistics of soft and hard breakdown in thin SiO::2:: gate oxidesJordi Suñé, Ernest Y. Wu, D. Jiménez, Wing L. Lai. mr, 43(8):1185-1192, 2003. [doi]

Critical reliability challenges in scaling SiO::2::-based dielectric to its limitErnest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon. mr, 43(8):1175-1184, 2003. [doi]

2002

A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO::2:: and nitride-oxide dielectricsFen Chen, Rolf-Peter Vollertsen, Baozhen Li, Dave Harmon, Wing L. Lai. mr, 42(3):335-341, 2002. [doi]

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectricsErnest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon. ibmrd, 46(2-3):287-298, 2002. [doi]

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