| 675 | -- | 0 | Masaaki Kuzuhara. Special Section on Fundamentals and Applications of Advanced Semiconductor Devices |
| 676 | -- | 682 | Hirotaka Amasuga, Toshihiko Shiga, Masahiro Totsuka, Seiki Goto, Akira Inoue. High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications |
| 683 | -- | 687 | Seok Gyu Choi, Young Hyun Baek, Jung Hun Oh, Min Han, Seok Ho Bang, Jin Koo Rhee. Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics |
| 688 | -- | 692 | Hiroshi Watanabe, Shunsuke Nakamura, Takao Waho. A Design of HEMT Comparators for Ultrahigh-Speed A/D Conversion |
| 693 | -- | 698 | Mi-Ra Kim, Seong-Dae Lee, Yeon-Sik Chae, Jin Koo Rhee. Design and Fabrication of Planar GaAs Gunn Diodes |
| 699 | -- | 702 | Sung Ho Hwang, Jin Dong Song, Won Jun Choi, Jung-Il Lee. Enhanced Characteristics of In::0.5::Ga::0.5::As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment |
| 703 | -- | 707 | Jin Young Kim, Jung-Ho Seo, Hyun-Woo Lim, Chang-Hyun Ban, Kyu-Chae Kim, Jin-Goo Park, Sung-Chae Jeon, Bong-Hoe Kim, Seung-Oh Jin, Young Hu. Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor |
| 708 | -- | 711 | Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao. Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application |
| 712 | -- | 715 | Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki. Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO::2:: Structure as Evaluated by AFM/KFM |
| 716 | -- | 720 | Sang-Sik Choi, A-Ram Choi, Jae-Yeon Kim, Jeon-Wook Yang, Yong-Woo Hwang, Tae-Hyun Han, Deok Ho Cho, Kyu-Hwan Shim. Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si::0.88::Ge::0.12:: Heterostructure Channel |
| 721 | -- | 730 | Nobuo Karaki, Takashi Nanmoto, Satoshi Inoue. An Asynchronous Circuit Design Technique for a Flexible 8-Bit Microprocessor |
| 731 | -- | 735 | Seongjae Cho, Il Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park. Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI) |
| 736 | -- | 741 | Han-A-Reum Jung, Kyoung-Rok Han, Young-Min Kim, Jong-Ho Lee. Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure |
| 742 | -- | 746 | Jang-Gn Yun, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, Byung-Gook Park. Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme |
| 747 | -- | 750 | Dong Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim. Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In::2::O::3:: Nano-Particles Embedded in Polyimide Insulator |
| 751 | -- | 755 | Kyung Soo Park, Sun-Bo Woo, Kae-Dal Kwack, Tae-Whan Kim. A Design of Temperature-Compensated Complementary Metal-Oxide Semiconductor Voltage Reference Sources with a Small Temperature Coefficient |
| 756 | -- | 760 | Ki-Soo Nam, Pyong-Su Kwag, Oh-Kyong Kwon. A Scalable DC Model of High Voltage LDMOSFETs |
| 761 | -- | 766 | Seung-Hyun Song, Jae-Chul Kim, Sung-Woo Jung, Yoon-Ha Jeong. Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS |
| 767 | -- | 771 | A-Ram Choi, Sang-Sik Choi, Byung-Guan Park, Dongwoo Suh, Gyungock Kim, Jin Tae Kim, Jin Soo Choi, Deok Ho Cho, Tae-Hyun Han, Kyu-Hwan Shim. Selective Epitaxial Growth of SiGe Layers with High Aspect Ratio Mask of Dielectric Films |
| 772 | -- | 775 | Jae-Sik Kim, Eui-Sun Choi, Young-Hie Lee, Ki-Won Ryu. A Study on MgO-Ta::2::O::5:: System Ceramics for Microwave Component Application |
| 776 | -- | 779 | Hochul Lee, Youngchang Yoon, Ickhyun Song, Hyungcheol Shin. FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs |
| 780 | -- | 787 | Takao Fujii, Isao Ohta, Tadashi Kawai, Yoshihiro Kokubo. Parallel Coupled Microstrip Couplers Compensated with Periodic Floating-Conductors on Coupled Edges |
| 788 | -- | 797 | Quoc-Hoang Duong, Chang-Wan Kim, Sang-Gug Lee. All CMOS Low-Power Wide-Gain Range Variable Gain Amplifiers |
| 798 | -- | 805 | Lung-Jen Lee, Wang-Dauh Tseng, Rung-Bin Lin. Power Reduction during Scan Testing Based on Multiple Capture Technique |
| 806 | -- | 808 | Quoc-Hoang Duong, Jeong-Seon Lee, Sang-Hyun Min, Joong-Jin Kim, Sang-Gug Lee. A 90 dB 1.32 mW 1.2 V 0.13 mm:::2::: Two-Stage Variable Gain Amplifier in 0.18 µm CMOS |
| 809 | -- | 812 | Chia-Ling Wei, Lu-Yao Wu, Hsiu-Hui Yang, Chien-Hung Tsai, Bin-Da Liu, Soon-Jyh Chang. A Versatile Step-Up/Step-Down Switched-Capacitor-Based DC-DC Converter |