381 | -- | 0 | Naoki Hara. Foreword |
382 | -- | 389 | P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose. Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
390 | -- | 394 | Tokinobu Watanabe, Masahiro Hori, Taiki Saruwatari, Toshiaki Tsuchiya, Yukinori Ono. Evaluation of Accuracy of Charge Pumping Current in Time Domain |
395 | -- | 401 | P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose. Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia |
402 | -- | 405 | Sohya Kudoh, Shun'ichiro Ohmi. A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics |
406 | -- | 410 | Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki. Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements |
411 | -- | 421 | Ryo Nagata, Yuichiro Yanagi, Shunjiro Fujii, Hiromichi Kataura, Yasushiro Nishioka. Highly Conductive DMSO-Treated PEDOT: PSS Electrodes Applied to Flexible Organic Solar Cells |
422 | -- | 428 | Toan Thanh Dao, Hideyuki Murata. Tunable Threshold Voltage of Organic CMOS Inverter Circuits by Electron Trapping in Bilayer Gate Dielectrics |
429 | -- | 433 | Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals |
434 | -- | 438 | Xiang Yin, Masaki Sato, Seiya Kasai. Analysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device |
439 | -- | 445 | Youngkyu Jang, Changnoh Yoon, Ik Joon Chang, Jinsang Kim. Variation-Aware Flip Flop for DVFS Applications |
446 | -- | 453 | Keishi Tsubaki, Tetsuya Hirose, Nobutaka Kuroki, Masahiro Numa. A 32-kHz Real-Time Clock Oscillator with On-Chip PVT Variation Compensation Circuit for Ultra-Low Power MCUs |