Journal: IEICE Transactions

Volume 98-C, Issue 5

381 -- 0Naoki Hara. Foreword
382 -- 389P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose. Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
390 -- 394Tokinobu Watanabe, Masahiro Hori, Taiki Saruwatari, Toshiaki Tsuchiya, Yukinori Ono. Evaluation of Accuracy of Charge Pumping Current in Time Domain
395 -- 401P. Pungboon Pansila, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose. Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia
402 -- 405Sohya Kudoh, Shun'ichiro Ohmi. A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
406 -- 410Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki. Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
411 -- 421Ryo Nagata, Yuichiro Yanagi, Shunjiro Fujii, Hiromichi Kataura, Yasushiro Nishioka. Highly Conductive DMSO-Treated PEDOT: PSS Electrodes Applied to Flexible Organic Solar Cells
422 -- 428Toan Thanh Dao, Hideyuki Murata. Tunable Threshold Voltage of Organic CMOS Inverter Circuits by Electron Trapping in Bilayer Gate Dielectrics
429 -- 433Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park. Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
434 -- 438Xiang Yin, Masaki Sato, Seiya Kasai. Analysis on Non-Ideal Nonlinear Characteristics of Graphene-Based Three-Branch Nano-Junction Device
439 -- 445Youngkyu Jang, Changnoh Yoon, Ik Joon Chang, Jinsang Kim. Variation-Aware Flip Flop for DVFS Applications
446 -- 453Keishi Tsubaki, Tetsuya Hirose, Nobutaka Kuroki, Masahiro Numa. A 32-kHz Real-Time Clock Oscillator with On-Chip PVT Variation Compensation Circuit for Ultra-Low Power MCUs