| 939 | -- | 941 | John C. Zolper, Ben V. Shanabrook. Special issue on wide bandgap semiconductor devices |
| 942 | -- | 955 | Adrian R. Powell, Larry B. Rowland. SiC materials-progress, status, and potential roadblocks |
| 956 | -- | 968 | James A. Cooper, Anant Agarwal. SiC power-switching devices-the second electronics revolution? |
| 969 | -- | 986 | Ahmed Elasser, T. Paul Chow. Silicon carbide benefits and advantages for power electronics circuits and systems |
| 987 | -- | 992 | R. Chris Clarke, John W. Palmour. SiC microwave power technologies |
| 993 | -- | 1005 | Robert F. Davis, Amy M. Roskowski, Edward A. Preble, James S. Speck, Ben Heying, Jaime A. Jr. Freitas, Evan R. Glaser, William E. Carlos. Gallium nitride materials - progress, status, and potential roadblocks |
| 1006 | -- | 1014 | Manijeh Razeghi. Short-wavelength solar-blind detectors-status, prospects, and markets |
| 1015 | -- | 1021 | Hiroshi Amano, Satoshi Kamiyama, Isamu Akasaki. Impact of low-temperature buffer layers on nitride-based optoelectronics |
| 1022 | -- | 1031 | Umesh K. Mishra, Primit Parikh, Yifeng Wu. AlGaN/GaN HEMTs-an overview of device operation and applications |
| 1032 | -- | 1047 | Robert J. Trew. SiC and GaN transistors - is there one winner for microwave power applications? |
| 1048 | -- | 1058 | Steven C. Binari, P. B. Klein, Thomas E. Kazior. Trapping effects in GaN and SiC microwave FETs |
| 1059 | -- | 1064 | Robert T. Kemerley, H. Bruce Wallace, Max N. Yoder. Impact of wide bandgap microwave devices on DoD systems |
| 1065 | -- | 1076 | Philip G. Neudeck, Robert S. Okojie, Liang-Yu Chen. High-temperature electronics - a role for wide bandgap semiconductors? |
| 1077 | -- | 1082 | Terry Ericsen. Future navy application of wide bandgap power semiconductor devices |
| 1083 | -- | 1085 | Lenore Symons. Scanning our past from London [transatlantic telephony] |