Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach - researchr publication authors

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Khandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna. Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

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