Khandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna. Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{AabrarWR19,
title = {Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach},
author = {Khandker Akif Aabrar and Lan Wei and Ujwal Radhakrishna},
year = {2019},
doi = {10.1109/BCICTS45179.2019.8972762},
url = {https://doi.org/10.1109/BCICTS45179.2019.8972762},
researchr = {https://researchr.org/publication/AabrarWR19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0586-4},
}