Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach - researchr publication related

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Khandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna. Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

The following publications are possibly variants of this publication:

MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping EffectsRyan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei. bcicts 2022: 21-24 [doi]

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