The Impact of Random Device Variation on SRAM Cell Stability in Sub-90-nm CMOS Technologies

Kanak Agarwal, Sani R. Nassif. The Impact of Random Device Variation on SRAM Cell Stability in Sub-90-nm CMOS Technologies. IEEE Trans. VLSI Syst., 16(1):86-97, 2008. [doi]

@article{AgarwalN08,
  title = {The Impact of Random Device Variation on SRAM Cell Stability in Sub-90-nm CMOS Technologies},
  author = {Kanak Agarwal and Sani R. Nassif},
  year = {2008},
  doi = {10.1109/TVLSI.2007.909792},
  url = {http://doi.ieeecomputersociety.org/10.1109/TVLSI.2007.909792},
  researchr = {https://researchr.org/publication/AgarwalN08},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. VLSI Syst.},
  volume = {16},
  number = {1},
  pages = {86-97},
}