Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study

J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha. Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study. Microelectronics Journal, 114:105141, 2021. [doi]

@article{AjayanNTBAFMA21,
  title = {Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study},
  author = {J. Ajayan and D. Nirmal and Shubham Tayal and Sandip Bhattacharya and L. Arivazhagan and A. S. Augustine Fletcher and P. Murugapandiyan and D. Ajitha},
  year = {2021},
  doi = {10.1016/j.mejo.2021.105141},
  url = {https://doi.org/10.1016/j.mejo.2021.105141},
  researchr = {https://researchr.org/publication/AjayanNTBAFMA21},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {114},
  pages = {105141},
}