Analysis of layout density in FinFET standard cells and impact of fin technology

Massimo Alioto. Analysis of layout density in FinFET standard cells and impact of fin technology. In International Symposium on Circuits and Systems (ISCAS 2010), May 30 - June 2, 2010, Paris, France. pages 3204-3207, IEEE, 2010. [doi]

Abstract

Abstract is missing.