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Influence of the SiO::2:: layer thickness on the degradation of HfO::2::/SiO::2:: stacks subjected to static and dynamic stress conditions

E. Amat, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. Influence of the SiO::2:: layer thickness on the degradation of HfO::2::/SiO::2:: stacks subjected to static and dynamic stress conditions. Microelectronics Reliability, 47(4-5):544-547, 2007. [doi]

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