Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment - researchr publication authors

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Behnam Amelifard, Farzan Fallah, Massoud Pedram. Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment. In Georges G. E. Gielen, editor, Proceedings of the Conference on Design, Automation and Test in Europe, DATE 2006, Munich, Germany, March 6-10, 2006. pages 995-1000, European Design and Automation Association, Leuven, Belgium, 2006. [doi]

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