Behnam Amelifard, Farzan Fallah, Massoud Pedram. Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment. In Georges G. E. Gielen, editor, Proceedings of the Conference on Design, Automation and Test in Europe, DATE 2006, Munich, Germany, March 6-10, 2006. pages 995-1000, European Design and Automation Association, Leuven, Belgium, 2006. [doi]
@inproceedings{AmelifardFP06,
title = {Reducing the sub-threshold and gate-tunneling leakage of SRAM cells using Dual-Vt and Dual-Tox assignment},
author = {Behnam Amelifard and Farzan Fallah and Massoud Pedram},
year = {2006},
doi = {10.1145/1131758},
url = {http://doi.acm.org/10.1145/1131758},
researchr = {https://researchr.org/publication/AmelifardFP06},
cites = {0},
citedby = {0},
pages = {995-1000},
booktitle = {Proceedings of the Conference on Design, Automation and Test in Europe, DATE 2006, Munich, Germany, March 6-10, 2006},
editor = {Georges G. E. Gielen},
publisher = {European Design and Automation Association, Leuven, Belgium},
isbn = {3-9810801-0-6},
}